IPB025N08N3 G
Manufacturer:
Infineon
Mfr.Part #:
IPB025N08N3 G
Datasheet:
Description:
MOSFETs TO-263-3 SMD/SMT N-Channel number of channels:1 300 W 80 V Continuous Drain Current (ID):120 A 206 nC
| Parameter | Value |
|---|---|
| Gate Charge | 206 nC |
| Gate to Source Threshold Voltage | 2.8 V |
| Continuous Drain Current (ID) | 120 A |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 2.4 mΩ |
| Input capacitance | 14.2 nF |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Power Dissipation | 300 W |
| Drain to Source Breakdown Voltage (Vds) | 80 V |
| Number of Channels | 1 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 3466
Distributors
pcbx
pcbxUnit Price$2.91018
Ext.Price$2.91018
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.91018 | $2.91018 |
| 10 | $2.06551 | $20.65510 |
| 25 | $1.91487 | $47.87175 |
| 50 | $1.77521 | $88.76050 |
| 100 | $1.64574 | $164.57400 |
| 300 | $1.61728 | $485.18400 |
| 500 | $1.58931 | $794.65500 |
| 1000 | $1.29522 | $1295.22000 |